Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer

Single quantum dot nanowire LEDs.

We report reproducible fabrication of InP-InAsP nanowire light-emitting diodes in which electron-hole recombination is restricted to a quantum-dot-sized InAsP section. The nanowire geometry naturally self-aligns the quantum dot with the n-InP and p-InP ends of the wire, making these devices promising candidates for electrically driven quantum optics experiments. We have investigated the operati...

Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency

We report the development of Al0.7Ga0.3N /AlN quantum wells with high internal quantum efficiency. All samples had identical well and barrier thickness but the III/V flux ratio was varied during growth by increasing the Ga flux. The luminescence spectra show single peaks which vary from 220 nm III /V 1 to 250 nm III /V 1 with internal quantum efficiency varying from 5% to 50%, respectively. To ...

Plasma heating in highly excited GaN/AlGaN multiple quantum wells

ZnO Nanorod LEDs and Silicon Nanowire Integration

This article reports on the growth and integration of ZnO and Si nanowires sponsored under this grant. The first part was carried out by Xinyu Wang and is completed. It reports ZnO growth for the formation of nanorod LED arrays on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias were found to be distinctly different. Forward bias showed two peaks centered aro...

ZnO Nanowire/p-GaN Heterojunction LEDs

This article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse bias showed a single peak at 510 nm. Analysis of t...